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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2047 UHF power LDMOS transistor
Product specification Supersedes data of 1999 Jul 01 1999 Dec 02
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside eliminates DC isolators, reducing common mode inductance * Designed for broadband operation (1.8 to 2.2 GHz). * Internal input and output matching for high gain and efficiency APPLICATIONS * Common source class-AB operation for PCN and PCS applications in the 1800 to 2200 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2200; f2 = 2200.1 VDS (V) 26 28 CAUTION PL (W) 65 (PEP) 65 (PEP) Gp (dB) >10 typ. 12.6 D (%) >30
2 Top view 3
handbook, halfpage
BLF2047
PINNING PIN 1 2 3 drain gate source connected to flange DESCRIPTION
1
MBK394
Fig.1 Simplified outline SOT502A.
dim (dBc) -25 typ. -29
typ. 31
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Dec 02
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage DC drain current storage temperature junction temperature PARAMETER - - - -65 - MIN.
BLF2047
MAX. 65 15 9 +150 200 V V A
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. Determined under specified RF operating conditions, based on maximum peak junction temperature. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Crss PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance CONDITIONS VGS = 0; ID = 1.4 mA VDS = 10 V; ID = 140 mA VGS = 0; VDS = 26 V VGS =VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 5 A VGS =VGSth + 9 V; ID = 5 A VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 1.5 - 18 - - - - TYP. - - - - - 4 0.17 3.4 MAX. - 3.5 10 - 250 - - - UNIT V V A A nA S pF PARAMETER CONDITIONS VALUE 1.15 UNIT K/W
thermal resistance from junction to heatsink Th = 25 C, Ptot = 152 W, note 1
1999 Dec 02
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth j-h = 1.15 K/W; unless otherwise specified. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2200; f2 = 2200.1 VDS (V) 26 28 IDQ (mA) 400 400 PL (W) 65 (PEP) 65 (PEP) Gp (dB) >10 typ. 12.6 D (%) >30 typ. 31 dim (dBc) -25 typ. -29
Ruggedness in class-AB operation The BLF2047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; IDQ = 400 mA; PL = 65 W (CW); f = 2200 MHz.
MGS914
MGS913
handbook, halfpage
15
50
D
handbook, halfpage
15
50
Gp (dB) Gp
(%) 40
Gp (dB)
Gp
D (%)
40
D
10
30 10 20
D
30
20
10
10
5 0 20 40
0 60 80 PL (PEP) (W)
5 0 20 40
0 60 80 PL (PEP) (W)
VDS = 26 V; IDQ = 400 mA; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz.
VDS = 26 V; IDQ = 400 mA; Th 25 C; f1 = 2200 MHz; f2 = 2200.1 MHz.
Fig.2
Power gain and drain efficiency as functions of peak envelope load power; typical values.
Fig.3
Power gain and drain efficiency as functions of peak envelope load power; typical values.
1999 Dec 02
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
handbook, halfpage
0
MGS915
handbook, halfpage
0
MGS916
dim (dBc) -20
dim (dBc) -20
d3
d3
d5 -40 d7 -40
d5 d7
-60
0
20
40
60
80 100 PL (PEP) (W)
-60
0
20
40
60
80 100 PL (PEP) (W)
VDS = 26 V; IDQ = 400 mA; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz.
VDS = 26 V; IDQ = 400 mA; Th 25 C; f1 = 2200 MHz; f2 = 2200.1 MHz.
Fig.4
Intermodulation distortion as a function of peak envelope load power; typical values.
Fig.5
Intermodulation distortion as a function of peak envelope load power; typical values.
handbook, halfpage
0
MGS917
d3 (dBc) -20
(1)
(2)
(3)
-40
-60
0
20
40
60
80 100 PL (PEP) (W)
VDS = 26 V; Th 25 C; f1 = 2200 MHz; f2 = 2200.1 MHz. (1) IDQ = 350 mA. (2) IDQ = 400 mA. (3) IDQ = 450 mA.
Fig.6
Intermodulation distortion as a function of peak envelope load power; typical values.
1999 Dec 02
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
handbook, halfpage
8
MGS918
handbook, halfpage
8
MGS919
Zi () 4 ri
ZL () 4 RL
0
0
xi
-4
XL
-4 1.6
1.8
2
2.2
2.4 f (GHz)
2.6
-8 1.6
1.8
2
2.2
2.4 f (GHz)
2.6
VDS = 26 V; IDQ = 400 mA; PL = 80 W; Th 25 C.
VDS = 26 V; IDQ = 400 mA; PL = 80 W; Th 25 C.
Fig.7
Input impedance as a function of frequency (series components); typical values.
Fig.8
Load impedance as a function of frequency (series components); typical values.
handbook, full pagewidth
F1 R1 Vgate C5 C10 C11 C12 C13 C14 R2
VDD
L4 C4 L6 L2 L8 L10 L11
L13 C9
L15 L17 C8 L1 L3 C2 L5 L7 C1 L12 L14 L16 C6 L18 C7
MGS920
input 50
C3 L20
L19
output 50
L9
Fig.9 Class-AB test circuit at f = 2.2 GHz.
1999 Dec 02
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components (See Figs 9 and 10) COMPONENT C3, C8 C4, C9 C5, C12 C10 C11 C13 C14 F1 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10, L11 L12 L13 L14 L15 L16 L17 L18 L19 L20 R1, R2 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. DESCRIPTION VALUE 0.4 to 2.5 pF DIMENSIONS
BLF2047
CATALOGUE NO.
C1, C2, C6, C7 Tekelec variable capacitor; type 37281
multilayer ceramic chip capacitor; note 1 12 pF multilayer ceramic chip capacitor; note 2 12 pF electrolytic capacitor multilayer ceramic chip capacitor tantal SMD capacitor electrolytic capacitor Ferroxcube chip-bead 8DS3/3/8/9-4S2 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 metal film resistor 50 14.5 50 6 50 9.5 50 9.8 24.4 5.1 25.4 5.7 25.4 11.3 50 16.1 50 50 50 10 , 0.6 W 2.9 x 2.4 mm 4 x 11.7 mm 3.7 x 2.4 mm 2 x 30.8 mm 3.6 x 2.4 mm 3 x 18.8 mm 7.8 x 2.4 mm 4 x 18.3 mm 5 x 6.3 mm 7 x 37 mm 10.1 x 6 mm 2.4 x 32.8 mm 7.4 x 6 mm 2.5 x 15.6 mm 10.8 x 2.4 mm 3 x 10.4 mm 2.3 x 2.4 mm 3 x 2.4 mm 5.5 x 2.4 mm 2322 156 11009 10 F; 100 V 100 nF 4.5 F; 50 V 100 F; 63 V 2222 037 58101 4330 030 36301 2222 037 59109 2222 581 16641 multilayer ceramic chip capacitor; note 1 1 nF
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (r = 2.2); thickness 0.79 mm.
1999 Dec 02
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
handbook, full pagewidth
50
50
95
BLF2047 INPUT
BLF2047 OUTPUT
PH990109
VGS VDD
PH990110
C14 C5 R1 C13 C10 C9
R2 F1 C12 C11
C4
C3 C2 C1 C6 C7
C8
BLF2047 INPUT
BLF2047 OUTPUT
PH990109
PH990110
MGS921
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (r = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane.
Fig.10 Component layout for 2.2 GHz class-AB test circuit.
1999 Dec 02
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
PACKAGE OUTLINE Flanged LDMOST package; 2 mounting holes; 2 leads
BLF2047
SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.99 0.186 0.157 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-06-07 99-10-13
1999 Dec 02
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF2047
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Dec 02
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF2047
1999 Dec 02
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/04/pp12
Date of release: 1999
Dec 02
Document order number:
9397 750 06449

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